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d a t a sh eet preliminary speci?cation supersedes data of 1997 jun 11 file under integrated circuits, ic01 1997 aug 14 integrated circuits TDA1561q 2 23 w high efficiency car radio power amplifier
1997 aug 14 2 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q features low dissipation due to switching from single-ended (se) to bridge-tied load (btl) mode high common mode rejection ratio (cmrr) mute/standby/operating/se-only (mode select pin) zero crossing mute and standby circuit load dump protection circuit short-circuit safe to ground, to supply voltage and across load loudspeaker protection circuit device switches to single-ended operation at excessive junction temperatures. general description the TDA1561q is a monolithic power amplifier in a 13 lead single-in-line (sil) plastic power package. it contains two identical 23 w amplifiers. the dissipation is minimized by switching from se to btl mode, only when a higher output voltage swing is needed. the device is primarily developed for car radio applications. quick reference data ordering information symbol parameter conditions min. typ. max. unit v p supply voltage dc biased 6.0 14.4 18 v non operating -- 30 v load dump -- 50 v i orm repetitive peak output current -- 4a i q(tot) total quiescent current r l = - 95 150 ma i stb standby current - 150 m a ? z i ? input impedance - 60 - k w p o output power rl = 4 w ; eiaj - 36 - w thd 10% 21 23 - w g v voltage gain 31 32 33 db cmrr common mode rejection ratio f = 1 khz; r s =0 w- 80 - db svrr supply voltage ripple rejection f = 1 khz; r s =0 w 45 55 - db ?d v o ? dc output offset voltage -- 150 mv a cs channel separation r s =0k w 40 60 - db ?d g v ? channel unbalance -- 1db type number package name description version TDA1561q dbs13p plastic dil-bent-sil power package; 13 leads (lead length 12 mm) sot141-6
1997 aug 14 3 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q block diagram fig.1 block diagram. handbook, full pagewidth mld214 reference sources mute/standby thermal/ short-circuit protection higher temperature btl disable 0.5v p mute r mute r 7 v p 12 3 13 2 1 in1 in2 cin mode 1/2r hv 4 gnd1 10 gnd2 6 5 11 9 8 out2 out2 out1 out1 c TDA1561q p 11
1997 aug 14 4 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q pinning symbol pin description in1 1 input 1 hv p 2 half supply voltage control input mode 3 mute/standby/operating/se-only gnd1 4 ground 1 out1 5 inverting output 1 out1 6 non-inverting output 1 v p 7 supply voltage out2 8 inverting output 2 out2 9 non-inverting output 2 gnd2 10 ground 2 c 11 11 electrolytic capacitor for single-ended (se) mode cin 12 common input in2 13 input 2 fig.2 pin configuration. handbook, halfpage mld215 1 2 3 4 5 6 7 8 9 10 11 12 13 TDA1561q in1 hv gnd1 out1 v mode out1 out2 11 c cin in2 gnd2 out2 p p
1997 aug 14 5 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q functional description the TDA1561q contains two identical amplifiers with differential inputs. at low output power (up to output amplitudes of 3 v (rms) at v p = 14.4 v), the device operates as a normal se amplifier. when a larger output voltage swing is needed, the circuit switches internally to btl operation. with a sine wave input signal the dissipation of a conventional btl amplifier up to 2 w output power is more than twice the dissipation of the TDA1561q (see fig.9). in normal use, when the amplifier is driven with music-like signals, the high (btl) output power is only needed for a small percentage of time. under the assumption that a music signal has a normal (gaussian) amplitude distribution, the dissipation of a conventional btl amplifier with the same output power is approximately 70% higher (see fig.10). the heatsink has to be designed for use with music signals. with such a heatsink, the thermal protection will disable the btl mode when the junction temperature exceeds 145 c. in this case the output power is limited to 5 w per ampli?er. the gain of each amplifier is internally fixed at 32 db. with the mode pin, the device can be switched to the following modes: standby with low standby current (<50 m a) mute condition, dc adjusted on, operation se-only, operation (btl disabled). the device is fully protected against short-circuiting of the output pins to ground and to the supply voltage. it is also protected against short-circuiting the loudspeaker and high junction temperatures. in the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off causing a low dissipation. with permanent short-circuiting of the loudspeaker, the output stage will be repeatedly switched on and off. the duty cycle in the on condition is low enough to prevent excessive dissipation. to avoid plops during switching from mute to on or from on to mute/standby while an input signal is present, a built-in zero-crossing detector allows only switching at zero input voltage. however, when the supply voltage drops below 6 v (e.g. engine start), the circuit mutes immediately avoiding clicks coming from electronic circuitry preceding the power amplifier. the voltage of the se electrolytic capacitor (pin 11) is always kept at 0.5v p by means of a voltage buffer (see fig.1). the value of this capacitor has an important influence on the output power in se mode, especially at low signal frequencies, a high value is recommended to minimize dissipation at low frequencies.
1997 aug 14 6 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note 1. the value of r th(c-h) depends on the application (see fig.3). symbol parameter conditions min. max. unit v p supply voltage operating - 18 v non operating - 30 v load dump; t r > 2.5 ms - 50 v v p(sc) short-circuit safe voltage - 18 v v rp reverse polarity voltage - 6v i osm non-repetitive peak output current - 6a i orm repetitive peak output current - 4a p tot total power dissipation - 60 w t stg storage temperature - 55 +150 c t vj virtual junction temperature - 150 c t amb operating ambient temperature - 40 - c symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case see note 1 1.3 k/w r th(j-a) thermal resistance from junction to ambient 40 k/w
1997 aug 14 7 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q heatsink design there are two parameters that determine the size of the heatsink. the first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the btl mode. with a conventional btl ampli?er, the maximum power dissipation with a music-like signal (at each ampli?er) will be approximately two times 5 w. at a virtual junction temperature of 150 c and a maximum ambient temperature of 60 c, r th(vj-c) = 1.3 k/w and r th(c-h) = 0.2 k/w, the thermal resistance of the heatsink should be: compared to a conventional btl ampli?er, the TDA1561q has a higher ef?ciency. the thermal resistance of the heatsink should be: 150 60 C 25 ---------------------- 1.3 C 0.2 C 7.5 k/w = 1.7 150 60 C 25 ---------------------- ? ?? 1.3 C 0.2 C 13.8 k/w = fig.3 thermal equivalent resistance network. handbook, halfpage 3.6 k/w 0.6 k/w 3.6 k/w virtual junction out 1 out 1 case 3.6 k/w 0.6 k/w 3.6 k/w out 2 out 2 mgc424 0.1 k/w
1997 aug 14 8 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q dc characteristics v p = 14.4 v; t amb =25 c; measured in fig.6; unless otherwise speci?ed. note 1. the circuit is dc biased at v p = 6 to 18 v and ac operating at v p =8to18v. symbol parameter conditions min. typ. max. unit supplies v p supply voltage note 1 6.0 14.4 18.0 v i q quiescent current r l = - 95 150 ma i stb standby current - 150 m a v c average electrolytic capacitor voltage at pin 11 - 7.1 - v ?d v o ? dc output offset voltage on state -- 150 mv mute state -- 50 mv mode select switch (see fig.4) v ms voltage at mode select pin (pin 3) standby condition 0 - 1v mute condition 2 - 3v on condition (se/btl mode) 4 - 5.5 v on condition (se mode only) 7.5 - v p v i ms switch current through pin 3 v ms =5v -- 40 m a protection t dis btl disable temperature - 145 - c fig.4 switching levels of mode select switch. handbook, halfpage 0 mld216 v 1 2 3 4 5 6 7 8 p se only se/btl standby mute
1997 aug 14 9 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q ac characteristics v p = 14.4 v; r l =4 w ; c 11 = 1000 m f; f = 1 khz; t amb =25 c; measured in fig.6; unless otherwise speci?ed. notes 1. the distortion is measured with a bandwidth of 10 hz to 30 khz. 2. frequency response externally fixed (input capacitors determine low frequency roll-off). 3. the se to btl switch voltage level depends on v p . 4. noise output voltage measured with a bandwidth of 20 hz to 20 khz. 5. noise output voltage is independent of r s (see fig.6)(v i = 0 v). symbol parameter conditions min. typ. max. unit p o output power thd = 1% 15 18 - w thd = 10% 21 23 - w eiaj - 36 - w v p = 13.2 v; thd = 0.5% - 14 - w v p = 13.2 v; thd = 10% - 20 - w thd total harmonic distortion p o = 1 w; f = 1 khz; note 1 - 0.1 - % p d dissipated power see figs 9 and 10 w b p power bandwidth thd = 1%; p o = - 1db with respect to 15 w - 20 to 15 000 - hz f ro(l) low frequency roll-off - 1 db; note 2 - 25 - hz f ro(h) high frequency roll-off - 1 db 130 -- khz g v closed loop voltage gain 31 32 33 db svrr supply voltage ripple rejection r s =0 w ; v ripple = 2 v (p-p) on; f = 1 khz 45 60 - db mute; f = 1 khz - 90 - db standby; f = 100 hz to 10 khz 80 -- db cmrr common mode rejection ratio r s =0 w ; f = 1 khz - 80 - db ? z i ? input impedance 45 60 75 k w ?d z i ? mismatch in input impedance - 1 - % v se-btl se to btl switch voltage level note 3 - 3 - v ? v out ? output voltage-mute (rms value) v i = 1 v (rms) - 50 100 m v v n(o) noise output voltage on; r s =0 w ; note 4 - 160 300 m v on; r s =10k w ; note 4 - 170 -m v mute; note 5 - 20 -m v a cs channel separation r s =0 w 40 60 - db ?d g v ? channel unbalance -- 1db
1997 aug 14 10 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q test and application information fig.5 test diagram. handbook, full pagewidth 220 nf 470 nf 4 8 9 11 5 6 7 3 1 2 12 13 10 220 nf 4 3.9 1000 m f (16 v) 100 nf 3.9 10 nf 0.5v p 0.5r s mld223 TDA1561q 4 3.9 10 nf 3.9 100 nf input 2 input 1 r s r s 1000 m f 16 v 220 nf in1 hv p gnd1 out1 v p mode out1 out2 c 11 cin in2 gnd2 out2
1997 aug 14 11 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q fig.6 application diagram. handbook, full pagewidth 220 nf 100 nf 2 x 220 nf 4 8 9 11 5 6 7 3 1 2 12 13 power ground signal ground 10 220 nf 1000 m f 16 v 100 nf 4 3.9 1000 m f (16 v) 10 nf 3.9 100 nf 0.5v p mld213 TDA1561q 4 3.9 10 nf 3.9 100 nf in1 hv p gnd1 out1 v p mode out1 out2 c 11 cin in2 gnd2 out2 (1) r s r s 0.5r s connect boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.
1997 aug 14 12 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q handbook, full pagewidth mgk182 mode select gnd m s s vp gnd in1 in2 sgnd cool power m out 2 out 1 TDA1561q 4 220 nf 86.36 43.18 fig.7 pcb layout (component side) for the application of fig.6. dimensions in mm.
1997 aug 14 13 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q handbook, full pagewidth mgk183 mode gnd m s s vp gnd in2 in1 sgnd m out1 out2 86.36 43.18 fig.8 pcb layout (soldering side) for the application of fig.6. dimensions in mm.
1997 aug 14 14 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q internal pin configurations pin name equivalent circuit 1,12,13 in1, cin, in2 2hv p 3 mode h pin 1 pin 12 pin 13 v p mld217 handbook, halfpage mld218 pin 2 handbook, halfpage mld221 pin 3 v p
1997 aug 14 15 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q 5, 9 out1, out2 6, 8 out1, out2 11 c 11 pin name equivalent circuit handbook, halfpage mld220 v p pins 5, 9 handbook, halfpage mld219 v p pins 6, 8 mld222 pin 11
1997 aug 14 16 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q additional application information fig.9 dissipation; sine wave driven. handbook, halfpage 010 p o (w) 25 0 5 10 15 20 2 p d (w) 468 mbh692 (1) (2) input signal 1 khz, sinusoidal; v p = 14.4 v. (1) for a conventional btl amplifier. (2) for TDA1561q. fig.10 dissipation; pink noise through iec-268 filter. handbook, halfpage 010 p o (w) 25 0 5 10 15 20 2 p d (w) 468 mbh693 (1) (2) (1) for a conventional btl amplifier. (2) for TDA1561q. fig.11 iec-268 filter. 430 w input output 330 w 3.3 k w 3.3 k w 10 k w 91 nf 68 nf 470 nf 2.2 m f 2.2 m f mgc428
1997 aug 14 17 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q handbook, full pagewidth 220 nf pink noise 100 nf 2 220 nf 4 8 9 11 5 6 7 3 1 2 12 13 10 220 nf 4 3.9 1000 m f (16 v) 10 nf 3.9 100 nf 1/2v p on condition mgc427 TDA1561q 4 3.9 10 nf 3.9 100 nf iec-268 filter in1 hv p gnd1 out1 v p mode out1 out2 c 11 cin in2 gnd2 out2 fig.12 test and application diagram for dissipation measurements with a music-like signal (pink noise). fig.13 dc output voltage as a function of v p . handbook, halfpage 08 24 v p (v) v o (v) 12 0 4 8 16 mbh694 v ms =5v. fig.14 quiescent current as a function of v p . handbook, halfpage 08 24 v p (v) i q (ma) 125 0 25 50 75 100 16 mbh695 v ms = 5 v; r i = .
1997 aug 14 18 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q fig.15 i p as a function of v ms (pin 3). handbook, halfpage 02 8 6 off mute v mode (v) i p (ma) 160 0 40 80 120 4 mbh696 se/btl se only v p = 14.4 v; v in = 0 mv; r i = . fig.16 i ms as a function of v ms . handbook, halfpage 02 8 6 v mode (v) i mode ( m a) 80 64 0 16 32 48 4 mbh697 fig.17 output power as a function of v p . handbook, halfpage 8.4 10.8 18 15.6 (3) (2) (1) v p (v) p o (w) 60 0 20 40 13.2 mbh698 both channels driven. (1) eiaj. (2) thd = 10%. (3) thd = 1%. fig.18 thd + noise as a function of p o . handbook, halfpage 10 2 10 1 10 - 1 10 - 2 mbh699 10 - 2 10 - 1 1 thd + n (%) 10 p o (w) 10 2 (1) (2) (3) (1) f = 10 khz. (2) f = 1 khz. (3) f = 100 hz.
1997 aug 14 19 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q fig.19 thd + noise as a function of frequency. handbook, halfpage 10 1 10 - 1 10 - 2 mbh700 10 10 2 10 3 10 4 f (hz) thd + n (%) 10 5 (1) (2) (1) p o =10w. (2) p o =1w. fig.20 power bandwidth at thd = 1%. handbook, halfpage 16 18 20 14 12 10 mbh701 10 10 2 10 3 10 4 f (hz) b p (w) 10 5 (1) (2) (1) for out2. (2) for out1. fig.21 gain as a function of frequency. handbook, halfpage 32 34 36 30 28 26 mbh702 10 10 2 10 3 10 4 f (hz) g v (db) 10 6 10 5 v in =50mv. fig.22 svrr as a function of frequency. handbook, halfpage - 120 - 100 - 80 - 60 - 40 - 20 mbh703 10 10 2 10 3 10 4 f (hz) svrr (db) 10 5 on mute off v ripple(p-p) =2v.
1997 aug 14 20 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q fig.23 channel separation as a function of frequency. handbook, halfpage - 100 - 60 - 40 - 20 0 mbh704 10 10 2 10 3 10 4 f (hz) a cs (db) 10 5 (2) (1) (1) p o =1w. (2) p o =10w. fig.24 mode select circuit. handbook, halfpage mbh690 47 m f 10 k w mode 5 v/40 m a
1997 aug 14 21 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q fig.25 output waveforms. handbook, full pagewidth mbh691 0 1 2 t (ms) 3 1/2 v p 1/2 v p 0 - v p v p v p 0 v p v load (1) (2) (3) v master v slave 0 see fig.5: v load =v 6 - v 5 or v 8 - v 9 v master =v 6 or v 8 v slave =v 5 or v 9
1997 aug 14 22 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q package outline unit a e 1 a 2 b p cd (1) e (1) z (1) de d h ll 3 m references outline version european projection issue date iec jedec eiaj mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 3.4 v 0.8 12.2 11.8 1.7 e 2 5.08 2.4 1.6 e h 6 2.00 1.45 2.1 1.8 3.4 3.1 4.3 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. 12.4 11.0 sot141-6 0 5 10 mm scale q j 0.25 w 0.03 x d l e a c a 2 m l 3 q w m b p 1 d d z e 2 e e x h 113 j e h non-concave view b : mounting base side 95-03-11 97-12-16 dbs13p: plastic dil-bent-sil power package; 13 leads (lead length 12 mm) sot141-6 v m b
1997 aug 14 23 philips semiconductors preliminary speci?cation 2 23 w high ef?ciency car radio power ampli?er TDA1561q soldering introduction there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. however, wave soldering is not always suitable for surface mounted ics, or for printed-circuits with high population densities. in these situations reflow soldering is often used. this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our ic package databook (order code 9398 652 90011). soldering by dipping or by wave the maximum permissible temperature of the solder is 260 c; solder at this temperature must not be in contact with the joint for more than 5 seconds. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg max ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. repairing soldered joints apply a low voltage soldering iron (less than 24 v) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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